Vapor phase epitaxial growth method
文献类型：专利
| 作者 | EBE KOJI; NISHIJIMA YOSHITO; SHINOHARA KOJI |
| 发表日期 | 1988-02-29 |
| 专利号 | JP1988047940A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor phase epitaxial growth method |
| 英文摘要 | PURPOSE:To be able to continuously vapor grow multilayer epitaxial crystal layers having different compositions from composition in which the thickness of the layers or the thickness of the layers and the composition ratio are varied in an arbitrary one direction of the same substrate surface by reciprocating the substrate at a constant speed in a crucible in which growing material is evaporated. CONSTITUTION:A hole wall surface of the side that at least a substrate 23 passes has a wall surface crossing perpendicularly to the passing direction, and a substrate 23 to be grown is reciprocated at a constant speed out of a crucible 21 with respect on the crucible 21 for depositing vapor by heating a growing material 22 by a heater 21a. Thus, a vapor growth is executed in a state that crucible staying time with respect to the moving direction of the surface of the substrate 23 is different to form an epitaxial crystal layer in which a depositing quantity is varied in the moving direction of the surface of the substrate 23. In this manner, the epitaxial crystal layers having different compositions varied in the layer thickness or the layer thickness and the composition ratio varied in one direction of the substrate surface on the same substrate is continuously vapor grown continuously in multilayers. |
| 公开日期 | 1988-02-29 |
| 申请日期 | 1986-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67711]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | EBE KOJI,NISHIJIMA YOSHITO,SHINOHARA KOJI. Vapor phase epitaxial growth method. JP1988047940A. 1988-02-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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