Manufacturing device for semiconductor
文献类型：专利
| 作者 | KURODA TAKAROU; SAWADA YASUSHI; FUKUZAWA TADASHI |
| 发表日期 | 1983-07-27 |
| 专利号 | JP1983125819A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacturing device for semiconductor |
| 英文摘要 | PURPOSE:To economize the quantity of a V group element to be supplied by setting a cover up around a substrate crystal and maintaining the partial pressure of the V group element just before a substrate within a predetermined range when a III-V group compound semiconductor crystal is grown through a molecular-beam epitaxial method. CONSTITUTION:The substrate 2 is held into a vacuum vessel 1, the cylindrical cover 4 made of stainless steel is set up around the substrate, and liquid nitrogen is introduced 7 to cool the substrate. Accordingly, when the V group elements are difficult to adhere on the cover 4, the number of molecules reaching from an evaporating cell 8 and the number of molecules projected of a V group gas as an atmosphere are made approximately the same in the vicinity of the substrate and the degree of vacuum is kept within the range of 10-10 Torr partial pressure, the quantity of the V group elements supplied can be reduced by half. It is proper that a distance between the substrate 2 and the cover 4 is approximately 10cm, and the substrate crystal is polluted when the distance is too short. |
| 公开日期 | 1983-07-27 |
| 申请日期 | 1982-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67718]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,SAWADA YASUSHI,FUKUZAWA TADASHI. Manufacturing device for semiconductor. JP1983125819A. 1983-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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