Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module
文献类型：专利
| 作者 | YOSHIDA, JUNJI; IRINO, SATOSHI |
| 发表日期 | 2003-04-10 |
| 专利号 | US20030068125A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module |
| 英文摘要 | An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP spacer layer, a p-InP cladding layer and a p-InGaAsP contact layer are sequentially laminated on an n-InP substrate, and an n-type electrode is disposed on a lower portion of the n-InP substrate. Also, a diffraction grating is disposed on a portion region of the p-InP spacer layer, and an insulating film is disposed on the p-InGaAsP contact layer corresponding to the diffraction grating so that injected current is prevented from flowing in respect to the diffraction grating. |
| 公开日期 | 2003-04-10 |
| 申请日期 | 2002-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67719]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | YOSHIDA, JUNJI,IRINO, SATOSHI. Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module. US20030068125A1. 2003-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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