Optically bistable semiconductor laser device
文献类型：专利
| 作者 | MUTSUKAWA HIROYUKI |
| 发表日期 | 1990-07-25 |
| 专利号 | JP1990189529A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optically bistable semiconductor laser device |
| 英文摘要 | PURPOSE:To improve controllability for light output and wavelength by providing a diffraction grating above the active layer in the oversaturation absorption area of a saturable absorption type bistable semiconductor laser, and extracting and feeding a part of the light output back to a bias current. CONSTITUTION:An oversaturation absorption area 1a which has no electrode is provided a part of an oversaturation absorption type optical bistable semiconductor laser 1 and a part of the light output confined to the active layer 1b is guided out perpendicularly or almost perpendicularly to the active layer 1b. Then the light guided out of the diffraction grating 2 is detected by a light receiving part 3 provided independently of the semiconductor laser 1 and converted into an electric signal, which is fed back to the bias current of the semiconductor 1 by the control part 4 to control the light output. Consequently, the light output can stably be controlled and feedback to the temperature of the semiconductor 1 is provided similarly to stably control oscillation wavelength. |
| 公开日期 | 1990-07-25 |
| 申请日期 | 1989-01-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MUTSUKAWA HIROYUKI. Optically bistable semiconductor laser device. JP1990189529A. 1990-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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