Wavelength-tunable semiconductor laser device
文献类型：专利
| 作者 | TSUKADA NORIAKI; FUJIWARA KENZO; TOKUDA YASUKI |
| 发表日期 | 1988-11-17 |
| 专利号 | JP1988281491A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wavelength-tunable semiconductor laser device |
| 英文摘要 | PURPOSE:To enlarge the variable range of a laser oscillation wavelength, and increase the response speed, by shifting the exceton energy level of the quantum well active layer of a first semiconductor laser to the higher energy side, by the laser beam of a second semiconductor laser, whose wavelength is shorter than the oscillation wavelength of a first semiconductor laser. CONSTITUTION:A DFB laser A and a DH laser B are formed on the same substrate (2) is an n-AlGaAs lower clad layer. (21) is a laser active layer composed of a multi-quantum well structure of a GaAs layer and an AlGaAs layer. (4) is a p-AlGaAs upper clad layer. (5) is a p GaAs cap layer. (6) and (6b) are upper surface electrodes. (6c) is a lower rear electrode. (7) is a diffraction grating region of the DFB laser A. A band end portion exists in the semiconductor. A light having a wavelength longer than it can be transmitted, and a light having a wavelength shorter than it is absorbed in the semiconductor surface. When a laser light is turned on in the state where the wavelength omegaof an emitted laser beam is separated toward the long wavelength side from the absorption peak omega0(omega0>omega), the absorption spectrum of excitation can be shifted to the short wavelength side by the AC Stark effect. |
| 公开日期 | 1988-11-17 |
| 申请日期 | 1987-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67722]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TSUKADA NORIAKI,FUJIWARA KENZO,TOKUDA YASUKI. Wavelength-tunable semiconductor laser device. JP1988281491A. 1988-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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