Compound semiconductor laser element
文献类型：专利
| 作者 | HIBIYA TAKETOSHI; NISHIDA KATSUHIKO |
| 发表日期 | 1984-08-29 |
| 专利号 | JP1984151485A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor laser element |
| 英文摘要 | PURPOSE:To CW-oscillate an infrared-beam laser stably at the normal temperature by constituting a clad layer by a III-V group compound in a semiconductor laser element using an element selected from Pb or Sn and a compound selected from a group of S, Se, etc. as activators. CONSTITUTION:A (100) well is cut out of a P type GaSb single crystal, a lattice constant thereof is 6.094Angstrom and band gap energy thereof is 0.8eV, and used as a substrate for epitaxial growth. When the substrate is employed as a clad layer 2' and a Pb0.95Sn0.05Se layer, a lattice constant thereof is 6.125Angstrom and band gap energy thereof is 0.125eV, is grown on the layer 2' in 0mum thickness through a molecular-beam epitaxial method, a Pb0.95Sn0.05Se active layer 1 of excellent crystallinity is grown. An N type GaSb layer is grown on the layer 1 in 10mum thickness thickness through the molecular-beam epitaxial method as a clad layer 2. When electrodes are formed on the P type substrate and the N type GaSb layer and conductded, an infrared-beam laser of a 10mum wavelength is CW-oscillated at room temperature. |
| 公开日期 | 1984-08-29 |
| 申请日期 | 1983-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | HIBIYA TAKETOSHI,NISHIDA KATSUHIKO. Compound semiconductor laser element. JP1984151485A. 1984-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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