Photoelectronic device with built-in light emitting element and light receiving element
文献类型：专利
| 作者 | KOBAYASHI UICHIRO |
| 发表日期 | 1986-05-29 |
| 专利号 | JP1986111592A |
| 著作权人 | HITACHI TOBU SEMICONDUCTOR LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectronic device with built-in light emitting element and light receiving element |
| 英文摘要 | PURPOSE:To improve the performance of the wavelength split multitransmission system by reducing optical loss by a method wherein a plurality of emitted laser beams are taken into one optical fiber, which is optically connected once to a laser chip. CONSTITUTION:An optical communication transmitter has a laser chip 3 on top of a substrate 2 in a package 1 and is so formed as to emit laser beams 4 with wavelengths different from each other in the same direction. These laser beams 4 are produced so as to advance to the inner end of a transmission optical fiber 5 extending through the package The second N type clad layer exposed surface and the first clad layer exposed surface 26 are provided stepwise from the front of the laser chip 3 to depths, therefore, the width of the laser chip 3 can be reduced. In other words, many chips can be efficiently formed on wafers of the same area, and the improvement in manufacturing yield and the reduction in manufacturing cost are enabled. |
| 公开日期 | 1986-05-29 |
| 申请日期 | 1984-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67729]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI TOBU SEMICONDUCTOR LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI UICHIRO. Photoelectronic device with built-in light emitting element and light receiving element. JP1986111592A. 1986-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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