Surface light emitting type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TAKAMIYA SABUROU |
| 发表日期 | 1985-03-07 |
| 专利号 | JP1985042890A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface light emitting type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enable to obtain laser oscillation of excellent efficiency at a low operating current by a method wherein a convex surface is formed in one surface of the active layer, in the title device which irradiates a laser beam in the direction perpendicular to the active layer. CONSTITUTION:A recess 11c of frustum of circle cone is formed in one surface of an N type semiconductor substrate 1 An N type semiconductor layer 12 is epitaxially grown on one surface 11b of this substrate 11, and the concave surface is formed in a part of the substrate 11 corresponding to the recess 11c. The active layer 13 forming a P-N junction J2 with the layer 12 and having the convex surface 13a joined to the concave surface of the layer 12 is formed on the surface of this layer 12. When said induced emission occurs in the semiconductor laser of this construction, light is converged to the direction of optical axis by the convex surface 13. Therefore, photo gain is large in the neighborhood of the optical axis, and only a small amount of current is wastefully consumed at a part distant away of the optical axis, and accordingly laser oscillation of high efficiency can be realized at a low operating current. |
| 公开日期 | 1985-03-07 |
| 申请日期 | 1983-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67730]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | TAKAMIYA SABUROU. Surface light emitting type semiconductor laser and manufacture thereof. JP1985042890A. 1985-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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