Distributed bragg reflection type laser
文献类型：专利
| 作者 | NIINA TATSUHIKO; YOSHITOSHI KEIICHI |
| 发表日期 | 1983-12-16 |
| 专利号 | JP1983216492A |
| 著作权人 | SANYO DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed bragg reflection type laser |
| 英文摘要 | PURPOSE:To enable to manufacture a distributed Bragg reflection type laser with excellent heat sink effect without producing crystalline distortion due to the deterioration of heat and the difference of thermal expansion coefficient by laminating II-VI Group compound semiconductor of zinc blend type on the surface of an oscillation layer. CONSTITUTION:After an irregularity is formed on the surface of an exposed waveguide layer 4, a semiconductor layer 11 made of non-doped single crystal ZnSe is formed by a molecular beam epitaxial growing method on the surface of an oscillation layer 2. The surface of the layer 11 is formed to be flat, and partly removed to expose the part of the surface of a cap layer 7 in stripe shape. Since it is formed of non-doped ZnSe single crystal, no crystal distortion is produced in the grown layer, and since the ZnSe has extremely small light refractive index, the light enclosure effect into the layer 4 is improved, it can be further increased in thickness, and the flat surface of the layer 7 side can be increased, and the efficiency of the heat-sink can be enhanced. |
| 公开日期 | 1983-12-16 |
| 申请日期 | 1982-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67731]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO DENKI KK |
| 推荐引用方式 GB/T 7714 | NIINA TATSUHIKO,YOSHITOSHI KEIICHI. Distributed bragg reflection type laser. JP1983216492A. 1983-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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