Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers
文献类型：专利
| 作者 | GOMYO, AKIKO, C/O NEC CORP.; SUZUKI, TOHRU, C/O NEC CORP. |
| 发表日期 | 1995-09-27 |
| 专利号 | EP0669657A3 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers |
| 英文摘要 | 57 A heterojunction semiconductor device has a plurality of ordered phase alloy layers (1). Either the whole or a part of each of the ordered phase alloy layers has a crystal structure (triple-period structure) in which the ordered alloy (11) is of a composition corresponding to the [111]A direction and an anion composition modulation period that is triple that of a disordered structure (12). The double-period structure may alternatively be used. The triple-period or double-period structure applied to the layer structure of the heterostructure semiconductor device results in a reduction of the bandgap. |
| 公开日期 | 1995-09-27 |
| 申请日期 | 1995-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67734]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | GOMYO, AKIKO, C/O NEC CORP.,SUZUKI, TOHRU, C/O NEC CORP.. Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers. EP0669657A3. 1995-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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