Phase-lock semiconductor array
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; FURUKAWA RYOZO; HASHIMOTO AKIHIRO |
| 发表日期 | 1990-04-19 |
| 专利号 | JP1990106986A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Phase-lock semiconductor array |
| 英文摘要 | PURPOSE:To change effective index distribution in a laser oscillation wavelength, and to make the gains of a fundamental super-mode larger than those of other super-modes by forming end-section disordering regions having refractive indices smaller than the refractive indices of disordering regions on the outsides of the disordering regions positioned at both striped end sections. CONSTITUTION:A plurality of disordering regions 31 are disposed into a superlattice optical guide 26 to a stripe shape. The disordering regions 31 are shaped by the disordering of a superlattice by implating the ions of Si as an impurity. End-section disordering regions 32 are formed near both end sections of the disordering regions 31 arranged to the stripe shape. This region 32 is doped with Si ions in concentration higher than the disordering regions 31 and promoted in disordering in the end-section disordering regions 31, and the refractive indices of the regions 32 are set so as to be made smaller than the refractive indices of the disordering regions 3 The disordering regions 31 and the end-section disordering regions 32 are brought to an N type by implanting Si ions, and an internal current constriction and an index waveguide mechanism are formed. |
| 公开日期 | 1990-04-19 |
| 申请日期 | 1988-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67739]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,FURUKAWA RYOZO,HASHIMOTO AKIHIRO. Phase-lock semiconductor array. JP1990106986A. 1990-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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