Semiconductor photoamplifier
文献类型：专利
| 作者 | NITTA ATSUSHI |
| 发表日期 | 1990-10-01 |
| 专利号 | JP1990246181A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor photoamplifier |
| 英文摘要 | PURPOSE:To constitute a traveling-wave type optical amplifier which restrains spontaneous emission light from being mixed by a method wherein a light waveguide is formed in a direction which is different from an oscillation direction of a semiconductor laser being oscillated or which is identical to that but which is not overlapped with that. CONSTITUTION:An oscillation wavelength of input light (signal light) 5 is set to about 860nm which is nearly identical to an oscillation wavelength of a laser amplifier 4. An electric current is injected to the laser amplifier 4 through a first electrode and a second electrode 7, 45; a laser is oscillated. In this state, the input light 5 is input to a waveguide 3. This input light is guided in a waveguide 3 and is amplified by an induced emission phenomenon when it crosses the laser amplifier 4; in addition, it is guided to another waveguide 3 and is output as output light 6. It is possible to suppress spontaneous emission light of the laser amplifier 4 in an oscillation state; it is possible to reduce that the spontaneous emission light causing a noise is mixed with the signal light; an amplification at a low noise can be executed. |
| 公开日期 | 1990-10-01 |
| 申请日期 | 1989-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67742]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | NITTA ATSUSHI. Semiconductor photoamplifier. JP1990246181A. 1990-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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