Composite type bistable semiconductor laser
文献类型：专利
| 作者 | NOMURA HIDENORI |
| 发表日期 | 1986-04-22 |
| 专利号 | JP1986079282A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Composite type bistable semiconductor laser |
| 英文摘要 | PURPOSE:To improve the degree of separation of an input and an output, and to conduct stable bistable laser operation even on cascade connection by forming an optical waveguide for the output and an optical waveguide for the input while being crossed each other in a laser resonator, using a crossing section as a parasitic region having a supersaturation absorption effect and employing other sections as an exciting region having an optical amplifying effect. CONSTITUTION:Both end surfaces of a crystal for a normal semiconductor laser in which InGaAsP/InP double hetero-junction structure is formed onto an N type InP substrate are cloven, and projecting surfaces 2f are shaped. A waveguide 1 for an input crossing at right angles with the projecting surfaces 2f and a waveguide 2 for an output running parallel with the projecting surfaces 2f are crossed each other and formed in the crystal, and a crossing section 3 is positioned in an etching section 3b shaped to the crossing section 3 and used as a parasitic region having a supersaturation absorption effect. Other sections 1a and 2a except the crossing section 3 are employed as exciting regions having an optical amplifying effect. Accordingly, a composite type bistable semiconductor laser capable of separating the input and the output is obtained. |
| 公开日期 | 1986-04-22 |
| 申请日期 | 1984-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67748]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI. Composite type bistable semiconductor laser. JP1986079282A. 1986-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。