Liquid phase growth of compound semiconductor
文献类型：专利
| 作者 | TANAKA TOSHIO; SOGOU TOSHIO; TAKAMIYA SABUROU |
| 发表日期 | 1984-07-06 |
| 专利号 | JP1984117111A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase growth of compound semiconductor |
| 英文摘要 | PURPOSE:To improve the flatness, distribution of impurity and distribution of film thickness of an epitaxial layer by a method wherein the direction of the plain of a substrate crystal is inclined a little from the lower exponential plane so that the ripple pattern of the surface is avoided. CONSTITUTION:A plane, which is inclined by theta deg., for instance 1, from the usual (100) plane keeping the longitudinal direction of resonance device as a shaft of inclination, is formed on an Si-doped N type GaAs substrate Each epitaxial layer 2-5 is deposited on this surface inclined by 1 deg.. The surface of the epitaxial wafer thus formed becomes quite uniform without ripple pattern or scale- like pattern. The plane can be inclined toward (0-1-1) plane, (0-11) plane and (01-1) plane. |
| 公开日期 | 1984-07-06 |
| 申请日期 | 1982-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67775]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,SOGOU TOSHIO,TAKAMIYA SABUROU. Liquid phase growth of compound semiconductor. JP1984117111A. 1984-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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