Manufacture of gaalinp crystal film
文献类型：专利
| 作者 | SATO MAKOTO; MINAGAWA SHIGEKAZU; KONDO MASAHIKO; UCHIDA KENJI |
| 发表日期 | 1988-10-03 |
| 专利号 | JP1988236314A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of gaalinp crystal film |
| 英文摘要 | PURPOSE:To enable a semiconductor crystal film for an optical device which stably operates at with a short wavelength, by controlling the growth rate of a GaAlInP epitaxial film in the manufacture of a semiconductor laser having the oscillation wavelength in a 600nm band. CONSTITUTION:On a GaAs substrate, tertiary or quaternary semiconductor crystal film of (GaxAl1-x)yIn1-yP having a lattice matching with the substrate is formed by an organic metal vapor growth at a gas pressure not smaller than 100torr and under a temperature of 650 deg.C-720 deg.C. Here, the growth rate of the (GaxAl1-x)yIn1-yP crystal film is 5mum/h-2.5mum/h, and the gas pressure is preferably a normal pressure. With this, the dispersion of P becomes a little, and a crystal film of a good quality can be obtained. |
| 公开日期 | 1988-10-03 |
| 申请日期 | 1987-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67786]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SATO MAKOTO,MINAGAWA SHIGEKAZU,KONDO MASAHIKO,et al. Manufacture of gaalinp crystal film. JP1988236314A. 1988-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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