Manufacture of stripped structure double hetero- junction type laser
文献类型：专利
| 作者 | KAWADA HATSUMI |
| 发表日期 | 1985-09-10 |
| 专利号 | JP1985176287A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of stripped structure double hetero- junction type laser |
| 英文摘要 | PURPOSE:To simplify a process, and to reduce cost by forming a projecting section to one part of the surface of a semiconductor substrate and growing a current constriction layer, a first clad layer, an active layer and a second clad layer in succession through one-time liquid phase growth process. CONSTITUTION:The surface of a P type substrate 21 consisting of a GaAs compound semiconductor to which Zn is doped is etched so as to leave a triangular projecting section, and Zn is diffused in high concentration to form a Zn diffusion layer 22. An N-GaAs layer 23 is grown through a liquid phase epitaxial growth method until the surface is flattened, and a first clad layer 24, an active layer 25, and a second clad layer 26 are grown through the liquid phase epitaxial growth method so as to shape a double hetero-junction. An impurity diffused from the Zn diffusion layer 22 easily passes through an upper thin section in the projecting section of the Zn diffusion layer 22 on the N-GaAs layer 23 and reaches up to the first clad layer 24, a striped structure current conductive path is formed, and the N GaAs layer 23 functions as a current constriction layer. |
| 公开日期 | 1985-09-10 |
| 申请日期 | 1984-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67789]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | KAWADA HATSUMI. Manufacture of stripped structure double hetero- junction type laser. JP1985176287A. 1985-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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