Processing of semiconductor substrate
文献类型：专利
| 作者 | NAGAO SHIGERU; FURUIKE SUSUMU |
| 发表日期 | 1984-03-26 |
| 专利号 | JP1984051524A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Processing of semiconductor substrate |
| 英文摘要 | PURPOSE:To remove residual In securely and protect an epitaxial growth surface from damage by a method wherein after a III-V compound semiconductor layer is formed on a semiconductor substrate by epitaxial growth in a solution whose solvent is In the substrate is immersed in metal Ga at low temperature. CONSTITUTION:An InP substrate 4 on which an epitaxial growth layer is formed is immersed in melted metal Ga kept in a carbon crucible at the temperature 200 deg.C and the temperature is kept at 200 deg.C about 30min. By this process, a small amount of In remained on the substrate produces Ga-rich In-Ga solution with the metal Ga. Then the crucible is cooled to the room temperature and an In-Ga alloy layer is formed on the substrate 4. Because a eutectic temperature of the In-Ga alloy is approximately as low as 15.7 deg.C, it isn't necessary to heat the substrate 4 to the temperature higher than 156 deg.C, a melting point of pure In, to remove the residual In. The In-Ga solution on the substrate can be easily wiped off by soft textile such as a cotton ball after immersed in warm water approximately 40 deg.C so that damage or cracking which occurs when the substrate is heated to high temperature for removing In by conventional method. |
| 公开日期 | 1984-03-26 |
| 申请日期 | 1982-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | NAGAO SHIGERU,FURUIKE SUSUMU. Processing of semiconductor substrate. JP1984051524A. 1984-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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