Method for vapor growth of lanthanoid element doped semiconductor
文献类型：专利
| 作者 | UEI KUNIHIKO; TAKAHEI KENICHIRO; NAKAGOME HIROSHI |
| 发表日期 | 1988-07-29 |
| 专利号 | JP1988184324A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for vapor growth of lanthanoid element doped semiconductor |
| 英文摘要 | PURPOSE:To manufacture a lanthanoid element doped III-V compound by metal organic chemical vapor deposition method (MOCVD) which is considered as a most desirable method for manufacture of device, by adding the gas including vapor of organic compound of lathanoid element to the vapor growth reaction gas to easily manufacture multi-component mixed crystals, double hetero structure and superlattice structure. CONSTITUTION:The vapor of an organic compound including lanthanoids such as ytterbium (Yb), erbium (Er), neodymium (Nd), praseodybium (Pr), etc., is introduced using adequate carrier gas into a reaction tube 13 for crystal growth during growth of III-V compound by an MOCVD method to manufacture the lanthanoid element doped III-V compound. According to this vapor growth method, doping is carried out during the epitaxial growth by using an organic compound of lanthanoids as the dopant. Therefore, a high quality lanthanoid element doped III-V compound crystal can be obtained by doping a desired lanthanoid element of the concentration of 10cm to 10cm in a desired thickness with good accuracy to a complicated structure such as of double hetero and superlattice. |
| 公开日期 | 1988-07-29 |
| 申请日期 | 1987-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67794]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | UEI KUNIHIKO,TAKAHEI KENICHIRO,NAKAGOME HIROSHI. Method for vapor growth of lanthanoid element doped semiconductor. JP1988184324A. 1988-07-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。