Semiconductor laser device, and method for producing it
文献类型：专利
| 作者 | SCHMID, WOLFGANG |
| 发表日期 | 2004-02-12 |
| 专利号 | US20040028106A1 |
| 著作权人 | OSRAM GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device, and method for producing it |
| 英文摘要 | A semiconductor laser device, having an epitaxial semiconductor body (40) with a waveguiding layer (22), which contains an active radiation-generating layer (20), a laser-active emitter region (12), disposed in the epitaxial semiconductor body (40) and having a primary direction (30), which essentially corresponds to the exit direction of the laser radiation from the emitter region, and an amplifier region (14), adjoining the emitter region (12) in the semiconductor body (40) in the primary direction (30), for amplifying the laser radiation. The emitter region (12) and the amplifier region (14) form active regions in the semiconductor material. The waveguiding layer (22) is removed in some regions of the semiconductor body (40) outside the active regions (12, 14), in such a way that flanks (18; 32; 36) of the semiconductor body (40) that are produced by the removal form a shallow angle tau with the plane in which lies the waveguiding layer. |
| 公开日期 | 2004-02-12 |
| 申请日期 | 2003-02-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67798]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM GMBH |
| 推荐引用方式 GB/T 7714 | SCHMID, WOLFGANG. Semiconductor laser device, and method for producing it. US20040028106A1. 2004-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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