Liquid phase epitaxially growing method and device therefor
文献类型：专利
| 作者 | NAKAI SABUROU |
| 发表日期 | 1982-04-05 |
| 专利号 | JP1982056924A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxially growing method and device therefor |
| 英文摘要 | PURPOSE:To effectively prevent the occurrence of edgewise growth by supplying a large quantity of solution for melt back only to the periphery of a substrate. CONSTITUTION:A substrate 6 is contained in a stationary unit 1, and covers 41- 41''' are attached to the reservoirs 31-32''' of a side 2. A melt back solution 51 and desired various solutions 51'-51''' are contained in the reservoirs. The slide 2 is moved and a substrate 6 is sequentially contacted with the different solution in the same manner as the conventional method. However, a block having small gap between the center and the substrate is provided in the melt back reservoir 3 Since large quantity of solution 51 is supplied to the periphery of the substrate and small quantity of solution 51 is supplied to the center of the substrate, the periphery is etched in addition to the repair of the defect on the surface layer of the substrate, thereby effectively preventing the occurrence of the edgewise growth, and eliminating the chamfering and improving the yield. |
| 公开日期 | 1982-04-05 |
| 申请日期 | 1980-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67800]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NAKAI SABUROU. Liquid phase epitaxially growing method and device therefor. JP1982056924A. 1982-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。