Preparation of partial grating
文献类型：专利
| 作者 | YAMAMOTO KAZUHISA; TOUNO HIDETAKA; FUKUDA YOUJI |
| 发表日期 | 1984-01-19 |
| 专利号 | JP1984009920A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Preparation of partial grating |
| 英文摘要 | PURPOSE:To obtain the partial grating easily by forming a negative type resist film onto a substrate, coating a grating forming prearranged section with a mask, exposing an exposed resist film, developing the film and removing the resist film of a developing section, and etching the substrate while using the remaining resist film as a mask. CONSTITUTION:The negative type resist film 2 is formed onto the SiO2 substrate 1, and the mask is aligned and the resist film 3 except the grating forming prearranged section is exposed and cured. The resist film 3 is exposed by using an interference exposure method by laser beams or an electron beam exposure method, and developed and gratings 5 are formed only in sections 4 not cured. The substrate is etched while using the remaining gratings 5 as masks, and the gratings 6 are formed to the surface of the substrate Accordingly, the gratings are obtained only in desired sections. |
| 公开日期 | 1984-01-19 |
| 申请日期 | 1982-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67806]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO KAZUHISA,TOUNO HIDETAKA,FUKUDA YOUJI. Preparation of partial grating. JP1984009920A. 1984-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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