Buried-in type photosemiconductor device
文献类型：专利
| 作者 | OOBE ISAO; TODOROKI SATORU |
| 发表日期 | 1984-10-11 |
| 专利号 | JP1984178785A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried-in type photosemiconductor device |
| 英文摘要 | PURPOSE:To contrive to prolongate the lifetime and increase the reliability by restraining the current flowing through a buried interface and thus inhibiting the deterioration of said interface by restricting the diffused layer for current restriction in the first epitaxial grown layer. CONSTITUTION:An N type InP optical guide layer 2, an N type of P type InGaAsP active layer 3, a p type InP optical guide layer 4, and a P type InGaAsP cap layer 5 are successively laminated on an N type InP substrate 1 by liquid phase epitaxial growing method. Next, a stripe mask 6 of a fixed width is formed on the layer 5 and then etched down to the layer 2, and the second liquid phase epitaxial growth is performed at the removed part, thus forming a P type InP buried layer 7, an N type buried InP layer 8, and an N type InGaAsP cap layer 9. Then, a P diffused region 11 of a width narrower than that of the layer 5 and a depth reaching a part of the layer 4 is frmed by diffusing Zn by means of a mask 10 of a narrow width. Besides, the region 11 is restricted in the first grown layer, restraining the current flowing through the buried interface, and preventing the deterioration of said interface. |
| 公开日期 | 1984-10-11 |
| 申请日期 | 1983-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOBE ISAO,TODOROKI SATORU. Buried-in type photosemiconductor device. JP1984178785A. 1984-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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