Structure of semiconductor laser and manufacture of said laser
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1986-09-18 |
| 专利号 | JP1986210689A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of semiconductor laser and manufacture of said laser |
| 英文摘要 | PURPOSE:To prevent a leaking current due to the diffusion phenomenon of minority carriers and to implement stabilization of a lateral mode and excellent high-speed modulation characteristics, by making the resistance of an embedded a layer high, and isolating an active region from the high resistance layer. CONSTITUTION:On an n-InP substrate, an undoped InGaAsP active layer 2, a p-InP clad layer 3 and an undoped InGaAsP contact layer 4 are sequentially brown. Then, an SiO2 film 13 is formed by a CVD method or a sputtering method. Two stripe windows the formed by an ordinary photolighography method. Then, the active layer 2 is selectively etched away from both sides 14. The wafer having the SiO2 film is put on a graphite boat. The boat is covered with a polycrystalline InP plate. InP is grown in the grooves 14 at the sides of the active layer by mass conveying emthod. Then, a high resistance layer 5 is grown in the groove 6, and the SiO2 film is removed. An SiO2 mask is newly formed, and contact Zn is diffused 8. Then, an electrode is formed. |
| 公开日期 | 1986-09-18 |
| 申请日期 | 1985-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Structure of semiconductor laser and manufacture of said laser. JP1986210689A. 1986-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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