Manufacture of surface-emission type semiconductor laser
文献类型：专利
| 作者 | IGA KENICHI; FURUSAWA KOTARO; IBARAKI AKIRA |
| 发表日期 | 1990-02-22 |
| 专利号 | JP1990052486A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of surface-emission type semiconductor laser |
| 英文摘要 | PURPOSE:To allow a surface-emission type semiconductor to be formed easily by forming an internal current constriction structure with two crystal growths. CONSTITUTION:An n-Ga0.6Al0.4As clad layer 2, a p-Ga0.9A0.1As activation layer 3, a p-Ga0.6Al0.4As clad layer 4, and an n-GaAs layer 5 are allowed to grow in this order on an n-GaAs substrate 1 by first growth. Then, a mesa part 5a is formed on an n-GaAs layer 5. Then, an n-Ga0.6Al0.4As block layer 6 is allowed to grow on an n-GaAs 5 including the surface of the mesa part 5a by a second growth. After that, the mesa part 5a and the layer 5 are melt-back eliminated up to the clad layer 4 and a current constricting part 6a is formed. Then, a p-Ga0.6Al0.4As layer 7 and a p-Ga0.85Al0.15As cap layer 8 are allowed to grow on the block layer 6. Finally, one part of the substrate 1 corresponding to the current constricting part 6a is etched up to a clad layer 2, reflection mirrors 9a and 9b are formed on the contact surface with the clad layer 2 and on the upper surface of the cap layer 8 corresponding to it, and then electrodes 10a and 10b are formed to allow a face-emission type semiconductor laser to be formed. |
| 公开日期 | 1990-02-22 |
| 申请日期 | 1988-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,FURUSAWA KOTARO,IBARAKI AKIRA. Manufacture of surface-emission type semiconductor laser. JP1990052486A. 1990-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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