Semiconductor laser with transistor
文献类型：专利
| 作者 | OMURA ETSUJI; SHIBA TETSUO |
| 发表日期 | 1988-12-15 |
| 专利号 | JP1988307790A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with transistor |
| 英文摘要 | PURPOSE:To prevent the disconnection of a wiring pattern, and to enable fine working easily by forming a J-FET into a lateral junction type laser. CONSTITUTION:A first conductivity type first clad layer 24, an active layer 25 and a second clad layer 26 are shaped onto a semi-insulating substrate 23 through epitaxial growth in succession. A second conductivity type first inversion region 28a formed up to the substrate 23 from one part on the second clad layer 26, a first ohmic electrode 29 shaped onto the region 28a, a second conductivity type second inversion region 28b separated from the first inversion region 28a and formed up to the first clad layer 24 from one part on the second clad layer 26, a second ohmic electrode 31 shaped onto the region 28b, and a third ohmic electrode 32 formed onto the second clad layer 26 at a position separate at a distance larger than the second inversion region 28b from the first inversion region 28a are formed. Accordingly, the surface is flattened and fine working is facilitated, the gate length of a J-FET can be shortened, and not only the ultra-high speed modulation of a semiconductor laser is enabled but also a wiring pattern is not disconnected. |
| 公开日期 | 1988-12-15 |
| 申请日期 | 1987-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OMURA ETSUJI,SHIBA TETSUO. Semiconductor laser with transistor. JP1988307790A. 1988-12-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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