Semiconductor laser element and production of the same
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU |
| 发表日期 | 1992-05-19 |
| 专利号 | JP1992145680A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and production of the same |
| 英文摘要 | PURPOSE:To improve reliability under a high temperature condition by selecting a crystal wafer having the lattice constant ratio of active layer for substrate within the particular range to produce an element. CONSTITUTION:When lattice constants of a semiconductor substrate, semiconductor optical waveguide layer and semiconductor light emitting active layer are respectively set to a1, a2 and a3, these are in the following relationships, a1 |
| 公开日期 | 1992-05-19 |
| 申请日期 | 1990-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67838]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU. Semiconductor laser element and production of the same. JP1992145680A. 1992-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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