Semiconductor light emitting device structure
文献类型：专利
| 作者 | INABA FUMIO; ITO HIROMASA; MIZUYOSHI AKIRA |
| 发表日期 | 1988-05-23 |
| 专利号 | JP1988119282A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device structure |
| 英文摘要 | PURPOSE:To conduct the heat by the light emission of light emitting devices efficiently to a heat sink and to enable the light emission in the excellent convergency of light and in high luminance by fixing with conductive adhesives semiconductor light emitting devices formed with a through hole in a semiconductor substrate and the heat sink which has a protuberance which can be inserted in the through hole. CONSTITUTION:A conical frustum-shaped through hole H is formed at the center of a semiconductor substrate B made of n-type GaAs, an active region which includes a p-n junction PN is formed by diffusing Zn along the inner wall of the through hole H, a p-side electrode E1 is provided on the inner wall of the through hole H and on the bottom surface of the substrate B and a ring shape n-side electrode E2 is provided on the upper surface of the substrate B. Since a heat sink 1 is made of a nonconductive material, a thin film layer 5 made of a conductive material for conducting electricity to the electrode E1 on the inner wall of the through hole H is provided on the surface on which light emitting devices are attached of the heat sink The height of a protuberance 2 reaches to nearly a half of the through hole H and conductive adhesives 7 are deposited in the remaining region of the through hole H. The heat generated in the active region is immediately conducted to the heat sink 1 via the conductive adhesives 7 since the through hole H of the light emitting devices and the heat sink 1 can directly be connected by the protuberance 2. |
| 公开日期 | 1988-05-23 |
| 申请日期 | 1986-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | INABA FUMIO,ITO HIROMASA,MIZUYOSHI AKIRA. Semiconductor light emitting device structure. JP1988119282A. 1988-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。