Method for growing thin film crystal
文献类型：专利
| 作者 | USUDA KOJI; YASUAMI SHIGERU |
| 发表日期 | 1989-08-04 |
| 专利号 | JP1989194314A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for growing thin film crystal |
| 英文摘要 | PURPOSE:To obtain an epitaxial layer having less defect, by providing a buffer layer of a compound crystalline thin film of III-V group or II-IV group on a compound crystalline substrate comprising III-V group or II-IV group and heat-treating it in an atmosphere comprising an element having a high steam pressure of elements constituting those and then growing an epitaxial layer again. CONSTITUTION:A crystalline substrate 10 previously treated by organic solution and acid is put on a supporting plate 12 in a core tube 11 formed of a quartz tube and it is thermally cleaned in an AsH3 gas 15 while kept at, for example, 750 deg.C by a heater 13. Then, the AsH3 gas 15 and trimetylgallium gas 15' are introduced and a buffer layer 14 is grown. Then, the substrate 10 and the buffer layer 14 are heat-treated in the AsH3 gas 15 for 5 minutes at 800 deg.C again. In this way, dislocation is reduced by uniformly distributing a point defect in the layer 14 and then a mixed crystalline thin film of a compound semiconductor of III-V group is epitaxially grown. As a result, the point defect spread from the substrate and the like and an impurity are prevented from entering into the epitaxial layer and it is possible to obtain an epitxial layer with a good quality. |
| 公开日期 | 1989-08-04 |
| 申请日期 | 1988-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | USUDA KOJI,YASUAMI SHIGERU. Method for growing thin film crystal. JP1989194314A. 1989-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。