Variable wavelength semiconductor laser and optical module
文献类型：专利
| 作者 | GOTODA, MITSUNOBU |
| 发表日期 | 2003-01-09 |
| 专利号 | US20030007524A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser and optical module |
| 英文摘要 | A wavelength-tunable semiconductor laser is constructed by a semiconductor substrate; an optical waveguide provided over the upper surface of the semiconductor substrate; a front light reflection area that is provided at the front side in a laser beam emission direction by a part of the optical waveguide and comprises an SG-DBR mirror achieved by structurally repeating a portion comprising a pair of diffraction grating portion and a non-diffraction grating portion over plural periods on the assumption that the portion is set as one period; a rear light reflection area that is provided at the rear side in the laser beam emission direction by a part of the optical waveguide and comprises an SSG-DBR mirror achieved by structurally repeating, over plural periods, a portion in which the pitch of a diffraction grating pitch regularly varies from one end to the other end, both the ends being spaced at a predetermined distance, on the assumption that the portion is set as one period; an active region comprising an active layer provided between the front light reflection area and the rear light reflection area by a part of the optical waveguide; and a phase control area that is provided between the front light reflection area and the rear light reflection area by a part of the optical waveguide, and comprises a phase control layer whose refractive index is varied by current injection. |
| 公开日期 | 2003-01-09 |
| 申请日期 | 2002-05-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | GOTODA, MITSUNOBU. Variable wavelength semiconductor laser and optical module. US20030007524A1. 2003-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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