Semiconductor laser device and manufacture of the same
文献类型：专利
| 作者 | MIHASHI YUTAKA; NAGAI YUTAKA; GOTO YUKIO |
| 发表日期 | 1988-04-12 |
| 专利号 | JP1988081887A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture of the same |
| 英文摘要 | PURPOSE:To realize the high reliability and the long life of a semiconductor laser device by a method wherein a light guide layer and a contact layer are successively formed to have a ridge shape and current blocking layers which have a smaller band gap than an active layer are formed on the other regions. CONSTITUTION:The respective layers from 1st cladding layer 2 to a P-type GaAs contact layer 6 for attaching an electrode are made to grow on an N-type GaAs semiconductor substrate 1 successively in one process by MO-CVD. A stripe-shape pattern mask 10 is formed as an etching mask and the light guide layer 5 and the contact layer 6 are selectively removed by etching so as to expose the surface of the 2nd cladding layer 4. When N-type GaAs current blocking layers 7 which have a smaller band gap than the active layer 3 are made to grow, the current blocking layers 7 can be formed so as to cover the surface of the 2nd cladding layer 4 except the part under the ridge-shape light guide layer 5 and contact layer 6. Then, after the pattern mask 10 is removed by a known method, a negative side electrode 8 and a positive side electrode 9 are formed. |
| 公开日期 | 1988-04-12 |
| 申请日期 | 1986-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67857]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,NAGAI YUTAKA,GOTO YUKIO. Semiconductor laser device and manufacture of the same. JP1988081887A. 1988-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。