中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photonic-integrated-circuit fabrication process

文献类型:专利

作者KOCH, THOMAS LAWSON; KOREN, UZIEL
发表日期1990-02-28
专利号EP0356190A2
著作权人AT&T CORP.
国家欧洲专利局
文献子类发明申请
其他题名Photonic-integrated-circuit fabrication process
英文摘要An improved process for fabricating photonic circuits is disclosed. The inventive process starts with a growth of a base wafer comprising a stack of epitaxial layers of various materials. At least a portion of each of the material layers will ultimately be a functioning part of any of a number of devices which will form the PIC or will serve a role in at least one of the fabrication processing steps. Specific inventive processing steps are addressed to (1) interconnecting passive waveguides, active devices, and grating filtering regions without the substantial optical discontinuities which appear in the prior art, and (2) etching continuous waveguide mesas to different depths in different regions of the PIC so as to optimize the performance of each PIC device.
公开日期1990-02-28
申请日期1989-08-21
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/67858]  
专题半导体激光器专利数据库
作者单位AT&T CORP.
推荐引用方式
GB/T 7714
KOCH, THOMAS LAWSON,KOREN, UZIEL. Photonic-integrated-circuit fabrication process. EP0356190A2. 1990-02-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。