Surface- emitting laser device
文献类型：专利
| 作者 | OKUBO, ATSUSHI |
| 发表日期 | 2002-10-24 |
| 专利号 | US20020154664A1 |
| 著作权人 | MITSUI CHEMICALS INC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface- emitting laser device |
| 英文摘要 | In a surface-emitting laser device, an Al0.16Ga0.84As cladding layer, a GaAs optical waveguide layer, an Al0.30Ga0.70As carrier block layer, a GaAs side barrier layer, an InGaAs active layer, a GaAs side barrier layer, an Al0.30Ga0.70As carrier block layer, a GaAs optical waveguide layer, an Al0.16Ga0.84As cladding layer, an etching stop layer, and a contact layer are formed on a GaAs substrate in this sequence. A inclined facet which functions as a reflecting mirror is formed on a resonator optical axis between a horizontal resonator facet and a vertical resonator facet. With the constitution, thermal saturation and facet degradation can be suppressed as much as possible and high optical output power can be obtained. |
| 公开日期 | 2002-10-24 |
| 申请日期 | 1999-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS INC |
| 推荐引用方式 GB/T 7714 | OKUBO, ATSUSHI. Surface- emitting laser device. US20020154664A1. 2002-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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