Semiconductor material provided with si-doped gainp layer
文献类型：专利
| 作者 | MAEDA SHIGEO; WATABE SHINICHI; TADATOMO KAZUYUKI |
| 发表日期 | 1992-09-25 |
| 专利号 | JP1992269876A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor material provided with si-doped gainp layer |
| 英文摘要 | PURPOSE:To prevent that a peculiar crosshatched pattern caused by a GaAsP substrate and a dislocation are propagated. CONSTITUTION:An Si-doped GaInP layer 2 is formed on a GaAsP substrate When the Si-doped GaInP epitaxial layer 2 is formed, a layer whose dislocation density is low and whose surface is flat can be obtained. Consequently, when an LED or an LD is manufactured on a semiconductor material by this invention, its performance and its reliability can be enhanced remarkably. The title material is especially effective in an orange to green light-emitting element. |
| 公开日期 | 1992-09-25 |
| 申请日期 | 1991-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | MAEDA SHIGEO,WATABE SHINICHI,TADATOMO KAZUYUKI. Semiconductor material provided with si-doped gainp layer. JP1992269876A. 1992-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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