Fabrication method of semiconductor laser
文献类型：专利
| 作者 | SASAKI, YOSHIHIRO; OKUNUKI, YUICHIRO |
| 发表日期 | 2000-05-03 |
| 专利号 | EP0997995A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Fabrication method of semiconductor laser |
| 英文摘要 | A fabrication method for fabricating a semiconductor laser, which can improve the product yield by reliably removing a silicon oxide film deposited on a sidewall of a mesa shaped optical waveguide formed on a semiconductor substrate while reliably forming a silicon oxide film on an upper surface of the optical waveguide to lower the possibility of fabrication of semiconductor lasers having defective characteristics possibly caused by subsequent fabrication steps, is disclosed. After the optical waveguide is formed on the semiconductor substrate, a silicon oxide film is deposited on a whole surface of the wafer and, then, the silicon oxide film deposited on the whole surface of the wafer is etched to selectively remove the silicon oxide film on the sidewall of the optical waveguide . The formation of the silicon oxide film and the etching thereof are repeated at least twice successively. The formation of the silicon oxide film may be performed while applying a bias voltage to the semiconductor substrate. Alternatively, the formation of the silicon oxide film may be performed by depositing a silicon oxide film without application of a bias voltage to the semiconductor substrate and further depositing a silicon oxide film thereon while applying the bias voltage thereto. |
| 公开日期 | 2000-05-03 |
| 申请日期 | 1999-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67881]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SASAKI, YOSHIHIRO,OKUNUKI, YUICHIRO. Fabrication method of semiconductor laser. EP0997995A1. 2000-05-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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