Double hetero type light emitting element
文献类型：专利
| 作者 | YUGE SHOZO |
| 发表日期 | 1988-11-16 |
| 专利号 | JP1988278395A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero type light emitting element |
| 英文摘要 | PURPOSE:To improve reliability by gradually increasing the aluminum composition of a GaAlAs layer for forming an active layer adjacent to a GaAs substrate in its thicknesswise direction to reduce a stress distortion between a clad layer having high aluminum composition and a buffer layer. CONSTITUTION:A Ga1-wAlwAs buffer layer 2, an n-type AlxGa1-xAs clad layer 3, an AlyGa1-yAs active layer 4, a p-type AlxGa1-xAs clad layer 5, an n-type AlxGa1-xAs current narrowing layer 6 are sequentially crystal-grown on an n-type GaAs substrate Here, when the layer 2 is grown, aluminum composition is gradually increased from a direction of the substrate 1 to vary to the same aluminum composition as that of the layer 3. Thus, a stress distortion generated from the layer 3 having high aluminum composition can be reduced to improve reliability. |
| 公开日期 | 1988-11-16 |
| 申请日期 | 1987-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67883]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | YUGE SHOZO. Double hetero type light emitting element. JP1988278395A. 1988-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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