Manufacture of semiconductor epitaxial wafer
文献类型：专利
| 作者 | MUTO YUHEI; SAGARA MINORU; SUHARA MOTOI |
| 发表日期 | 1987-02-24 |
| 专利号 | JP1987042415A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor epitaxial wafer |
| 英文摘要 | PURPOSE:To suppress the diffusion of dopant contained in the epitaxial layer grown previously by a method wherein the growing temperature of the epitaxial layer to be grown later is made lower than the temperature of the formation of the epitaxial layer formed proviously. CONSTITUTION:In the process of manufacture of semiconductor epitaxial wafer using an MDCVD method wherein the first process, in which the first semiconductor layer containing zinc as a dopant is epitaxially grown, and also the second process to be performed subsequently, in which the second semiconductor layer is epitaxially grown using a thermal deposition method, a semiconductor epitaxial wafer is manufacture by performing the second process at the growing temperature lower than that of the first process. As the growing temperature of the second process is set lower than that of the first process, the diffusion of the zinc in the clad layer containing zinc and having a large diffusion coefficient can be suppressed. |
| 公开日期 | 1987-02-24 |
| 申请日期 | 1985-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67885]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MUTO YUHEI,SAGARA MINORU,SUHARA MOTOI. Manufacture of semiconductor epitaxial wafer. JP1987042415A. 1987-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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