Halbleiterlaserdiode
文献类型：专利
| 作者 | EICHLER CHRISTOPH; GERHARD SVEN; LELL ALFRED; STOJETZ BERNHARD |
| 发表日期 | 2019-05-09 |
| 专利号 | DE112017003576A5 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 德国 |
| 文献子类 | 发明申请 |
| 其他题名 | Halbleiterlaserdiode |
| 英文摘要 | A semiconductor laser diode comprising a semiconductor layer sequence (2) comprising an active layer (3) is specified, which has a main extension plane and which is configured to generate light (8) in an active region (5) during operation and to emit said light via a light coupling-out surface (6), wherein the active region (5) extends from a rear-side surface (7), which is situated opposite the light coupling-outer surface (6), to the light coupling-out surface (6) along a longitudinal direction (93) in the main extension plane, and wherein the semiconductor layer sequence (2) has a trench structure (10) comprising at least one trench (11, 12) or a plurality of trenches (11, 12) at least on a side laterally alongside the active region (5), wherein each trench (11, 12) of the trench structure (10) extends in a longitudinal direction (93) and projects into the semiconductor layer sequence (2) from a top side (20) of the semiconductor layer sequence (2) in a vertical direction (92), and wherein the trench structure (10) varies in a lateral and/or vertical and/or longitudinal direction (91, 92, 93) with regard to properties of the at least one trench (11, 12) or of the plurality of trenches (11, 12). |
| 公开日期 | 2019-05-09 |
| 申请日期 | 2017-07-12 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67995]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | EICHLER CHRISTOPH,GERHARD SVEN,LELL ALFRED,et al. Halbleiterlaserdiode. DE112017003576A5. 2019-05-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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