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文献类型：专利
| 作者 | FUJIWARA MASAHIKO |
| 发表日期 | 1986-08-18 |
| 专利号 | JP1986036298B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To secure detection of the light intensity change in the specific mode by irradiating the laser beam radiated from the semiconductor laser to the information carrier and then returning the reflection light to the active layer of the semiconductor. CONSTITUTION:Radiation laser beams 3 given from semiconductor laser 2 which is driven by power source 1 are focused on disk 10 recording the information to be read out via focusing optical system 4, and the laser beams reflected on disk 10 are focused again through system 4 to be used as feedback beam 6. This beam 6 is returned to the active layer of laser 2 to be then radiated through the emission end face of the other side of laser 2. And laser beam 11 is given to wavelength separator 12. Separator 12 detects partial vertical mode beam 13, and the intensity change of beam 13 is detected by optical detector 14. Then the intensity of beam 6 is modulated based on the pattern information recorded on disk 10, thus ensuring an easy detection for the light intensity change in the specific mode. |
| 公开日期 | 1986-08-18 |
| 申请日期 | 1978-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASAHIKO. -. JP1986036298B2. 1986-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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