中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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文献类型:专利

作者HARIKAE SHUNJI; SATO TOSHIO
发表日期1989-12-19
专利号JP1989059751B2
著作权人MATSUSHITA ELECTRIC IND CO LTD
国家日本
文献子类授权发明
其他题名-
英文摘要PURPOSE:To prevent the decrease in input to a sensor and to increase an S/N ratio by arranging an optical sensor so that it is slanted with respect to the optical axis of the semiconductor laser, in such a way that the reflected light of the incident light from the semiconductor laser does not enter the semiconductor laser again. CONSTITUTION:With respect to the optical axis x of the semiconductor laser 1, is arranged the rectangularly or elliptically shaped sensor 2 whose long side or major axis is (m) and short side or minor axis is (n). The short side or minor axis (n) of said sensor 2 is slanted by the angle theta with respect to the optical axis (x) of the laser The configuration is so determined that the reflected light of the incident light from the laser is not allowed to enter the laser, and long side m>short side (n). Thus, all the light entering the sensor 2 can be sensed almost perfectly. The sensed and amplified voltage from said sensor 2 is compared with a reference voltage from a reference voltage generator 4 in a voltage comparator 5. A driver 6 is controlled by the output of the comparator, and the light output of the laser 1 is controlled. Thus, the decrease in input to the sensor 2 is prevented, and the S/N ratio can be increased.
公开日期1989-12-19
申请日期1980-05-12
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/68624]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
HARIKAE SHUNJI,SATO TOSHIO. -. JP1989059751B2. 1989-12-19.

入库方式: OAI收割

来源:西安光学精密机械研究所

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