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文献类型：专利
| 作者 | MIHASHI YOSHINOBU; SHIMADA JUNICHI |
| 发表日期 | 1982-02-27 |
| 专利号 | JP1982036887A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a stable and reliable multimode oscillation semiconductor laser by forming an electrode region to which current is injected of small regions of irregular pattern. CONSTITUTION:A region to become a substantial current injection electrode 10 to a laser active layer is so formed with positive electricity 8 of small electrode regions 10i spaced logitudinally from each other, and can be entirely seen as irregular electrode pattern. An insulating film is interposed between the insulating parts 9i between the adjacent small electrode parts. When current is injected to the semiconductor laser having thus irregular electrode pattern in this manner, the excitation carrier density of oscillating direction of the laser becomes irregular. Accordingly, the oscillation spectrum can be multimode instead of single longitudinal mode. |
| 公开日期 | 1982-02-27 |
| 申请日期 | 1980-08-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | MIHASHI YOSHINOBU,SHIMADA JUNICHI. -. JP1982036887A. 1982-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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