Semiconductor laser device
文献类型：专利
| 作者 | YAMANAKA KATSUHIKO; MIURA AKIRA; YAGIHARA TAKESHI |
| 发表日期 | 1985-11-08 |
| 专利号 | JP1985224134A |
| 著作权人 | YOKOKAWA HOKUSHIN DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve an S/N ratio by driving a semiconductor laser by the signal on which high-frequency current is superposed and oscillating the laser with non-single mode. CONSTITUTION:The high-frequency current having the frequency, for example, 2.5-4GHz for returning the oscillation mode of the semiconductor laser LD to multimodes prior to lapse of the time when said mode changes to single mode is emitted from a high-frequency current source G and is superposed on the output current of a DC current source I via a capacitor C. The laser LD is thus driven by the signal on which the high frequency is superposed. The amplitude of the current source G is so set as to cut off thoroughly the threshold current of the laser LD. The characteristic having the stable S/N ratio is thus obtd. even if the optical length and the frequency of the high-frequency current vary to some extent. |
| 公开日期 | 1985-11-08 |
| 申请日期 | 1984-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68718]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | YOKOKAWA HOKUSHIN DENKI KK |
| 推荐引用方式 GB/T 7714 | YAMANAKA KATSUHIKO,MIURA AKIRA,YAGIHARA TAKESHI. Semiconductor laser device. JP1985224134A. 1985-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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