Semiconductor laser device
文献类型：专利
| 作者 | TATENO KIMIO |
| 发表日期 | 1986-09-24 |
| 专利号 | JP1986214491A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, whereby an imaging spot thereof is not shifted even on a temperature change, by fixing an oscillation wavelength. CONSTITUTION:Interference fringes 8 are captured by a photodetector 6 to which a pin hole 9 is formed. When the temperature of a semiconductor laser 1 changes and an oscillation wavelength slightly alters, interference fringes are shifted slightly so far as the optical path difference of an interferometer does not take zero, and light intensity received by the pin hole 9 varies. The oscillation wavelength lengthens in general when the driving currents of the semiconductor laser augment and shortens when the driving currents reduce. Accordingly, a servo circuit altering the driving currents of the semiconductor laser in the direction that the change of the amount of light detected by the photodetector 6 is constituted, thus eliminating the variation of the interference fringes, then fixing the oscillation wavelength of the semiconductor laser. |
| 公开日期 | 1986-09-24 |
| 申请日期 | 1985-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TATENO KIMIO. Semiconductor laser device. JP1986214491A. 1986-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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