Semiconductor laser device
文献类型:专利
作者 | YOSHITOSHI HIROSHI; KUME HIDEHIRO; MATSUMOTO YOSHIYUKI |
发表日期 | 1987-08-31 |
专利号 | JP1987196880A |
著作权人 | ソニー株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To reduce the cost of a semiconductor laser by both emitting a beam and detecting an incident beam by an integral optical component to readily regulate an optical path. CONSTITUTION:A photodetector 13 is formed on a substrate 12, and a prism 21 having a translucent reflecting surface 21a and at least one of reflecting surface 21b, 21c is fixed to the photodetector 13. A beam 16 emitted from a semiconductor laser 11 fixed on the semiconductor substrate 12 and reflected by the surface 21a is used as an emitting beam. The beam 16 incident to the surface 21a, passed through the surface 21a and further reflected on the surface 21b, 21c is detected by the photodetector 13. |
公开日期 | 1987-08-31 |
申请日期 | 1986-02-24 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/68846] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | ソニー株式会社 |
推荐引用方式 GB/T 7714 | YOSHITOSHI HIROSHI,KUME HIDEHIRO,MATSUMOTO YOSHIYUKI. Semiconductor laser device. JP1987196880A. 1987-08-31. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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