中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者YOSHITOSHI HIROSHI; KUME HIDEHIRO; MATSUMOTO YOSHIYUKI
发表日期1987-08-31
专利号JP1987196880A
著作权人ソニー株式会社
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To reduce the cost of a semiconductor laser by both emitting a beam and detecting an incident beam by an integral optical component to readily regulate an optical path. CONSTITUTION:A photodetector 13 is formed on a substrate 12, and a prism 21 having a translucent reflecting surface 21a and at least one of reflecting surface 21b, 21c is fixed to the photodetector 13. A beam 16 emitted from a semiconductor laser 11 fixed on the semiconductor substrate 12 and reflected by the surface 21a is used as an emitting beam. The beam 16 incident to the surface 21a, passed through the surface 21a and further reflected on the surface 21b, 21c is detected by the photodetector 13.
公开日期1987-08-31
申请日期1986-02-24
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/68846]  
专题半导体激光器专利数据库
作者单位ソニー株式会社
推荐引用方式
GB/T 7714
YOSHITOSHI HIROSHI,KUME HIDEHIRO,MATSUMOTO YOSHIYUKI. Semiconductor laser device. JP1987196880A. 1987-08-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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