Semiconductor device
文献类型：专利
| 作者 | KUBOTA MASAYUKI; SHIKAMA SHINSUKE; TODE HIDEKAZU; SOGO TOSHIO |
| 发表日期 | 1989-01-30 |
| 专利号 | JP1989027287A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obviate the need of reflection mirrors and to improve positional accuracy, by securing a semiconductor laser element on the plane of a semiconductor substrate approximately perpendicular to the plane on which a photodetector is provided so that the semiconductor laser element emits optical flux approximately vertically to the plane on which the photodetector is provided. CONSTITUTION:A photodetector 4 for receiving optical flux from the outside is formed on a first plane of a semiconductor substrate 8, and a semiconductor laser element 2 is secured on the plane approximately perpendicular to the first plane so that the laser element 2 emits optical flux approximately vertically to the photodetector 4. According to such arrangement, the semiconductor laser element is allowed to emit optical flux to the outside approximately vertically to the plane on which the photodetector 4 is formed, without the need of providing any inclined plane in the semiconductor substrate. Further, it is possible to provide an inexpensive semiconductor device in which the photodetector is positioned with high accuracy with respect to the semiconductor laser element. |
| 公开日期 | 1989-01-30 |
| 申请日期 | 1987-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | KUBOTA MASAYUKI,SHIKAMA SHINSUKE,TODE HIDEKAZU,et al. Semiconductor device. JP1989027287A. 1989-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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