Semiconductor laser driving circuit
文献类型:专利
作者 | KUBOTA SHINJI; OHARA SHUNJI; ISHIBASHI KENZO |
发表日期 | 1989-02-22 |
专利号 | JP1989048240A |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser driving circuit |
英文摘要 | PURPOSE:To stably and highly-speedily set the two kinds of power of bias power and peak power by setting the bias power with holding the control signal of a first current source and setting the peak power with holding the control signal of a second current source. CONSTITUTION:The titled circuit provides a first current source 7 to flow a current for the bias power, a second current source 15 to flow a current for the peak power with overlapping to the current for the bias power and a control means holding the control signal of a first current source 7 and setting the desired source 7 and setting the desired bias power when the power of the semiconductor laser coincides with the bias power desired to successively rise by the control signal of the first current source 7. This circuit also provides a means to successively rise the power of the semiconductor laser with the control signal of the second current source 15 and a means to hold the control signal of the second current source 15 when the power of the semiconductor laser coincides with the desired peak power and to set the desired peak power. Thus, the two kinds of power of the bias power and the peak power can be set stably and highly-speedily. |
公开日期 | 1989-02-22 |
申请日期 | 1987-08-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/68945] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | KUBOTA SHINJI,OHARA SHUNJI,ISHIBASHI KENZO. Semiconductor laser driving circuit. JP1989048240A. 1989-02-22. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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