Semiconductor laser modulating circuit
文献类型：专利
| 作者 | ASADA KENICHIRO; NAGASAWA KIYOTO |
| 发表日期 | 1989-07-20 |
| 专利号 | JP1989182866A |
| 著作权人 | 株式会社リコー |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser modulating circuit |
| 英文摘要 | PURPOSE:To attain the expression of high gradation by setting the current setting value of a constant current source to be variable with an external signal. CONSTITUTION:When an image signal is inputted from a terminal A, transistors TR1 and TR2 are alternately turned on and off. When the transistor TR2 is turned on, a current IRF, which is made flow by switching a constant current circuit X to be composed of transistors TR3-TR5 and resistances r3-r5, and a bias current IB with a transistor TR6 and a resistance R2 are made flow in correspondence to signals from terminals D0-D2. Accordingly, a semiconductor laser LD can be modulated by the coupling of modulation due to the pulse width of the image signal from the terminal A and power modulation due to the data D0-D2. Thus, the satisfactory picture of high resolution and high gradation can be obtained. |
| 公开日期 | 1989-07-20 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68961]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社リコー |
| 推荐引用方式 GB/T 7714 | ASADA KENICHIRO,NAGASAWA KIYOTO. Semiconductor laser modulating circuit. JP1989182866A. 1989-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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