Semiconductor optical memory
文献类型：专利
| 作者 | KASAHARA KENICHI; TASHIRO YOSHIHARU; SUGIMOTO MITSUNORI |
| 发表日期 | 1989-07-31 |
| 专利号 | JP1989189977A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical memory |
| 英文摘要 | PURPOSE:To make it possible to obtain a semiconductor optical memory, which shows bistable electrical characteristics to light incidence, by a method wherein an n-type semiconductor layer doped in a high concentration and a p-type semiconductor laser are set in a high concentration where the Zenner breakdown thereof occurs at a built-in voltage or thereabouts in the p-n junction. CONSTITUTION:Semiconductor memories 139-142 are formed on a semiconductor substrate. Each resonator is composed of a reverse 45 deg. mirror 143, a vertically erected high-reflecting mirror and the upper surface of an element. Light, which passes through the interior of an Al0.1Ga0.9As layer 120 to be used as an active layer and is amplified, is reflected by the mirror 143 and a laser beam comes out perpendicular to the substrate. Four resonators are formed on each memory 139-142 every 90 deg. Thereby, the light can be sent out toward the four different points. |
| 公开日期 | 1989-07-31 |
| 申请日期 | 1988-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/68963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI,TASHIRO YOSHIHARU,SUGIMOTO MITSUNORI. Semiconductor optical memory. JP1989189977A. 1989-07-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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