中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者HASEGAWA KAZUYOSHI
发表日期1990-10-12
专利号JP1990253688A
著作权人MITSUBISHI ELECTRIC CORP
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To obtain a semiconductor laser device which facilitates secure automatic power control(APC) driving and, further, has an optical pickup function by a method wherein a semiconductor laser chip which has one laser beam emitting point on each of its front and rear edges is employed and laser beams emitted from the front and rear edges to the directions opposite to each other are reflected to the same direction. CONSTITUTION:A semiconductor laser chip 12 which has one laser beam emitting point on each of its front and rear edges 19 and 20 is mounted on a semiconductor substrate 1 Laser beams 21 and 22 are emitted from the front and rear edges 19 and 20 to the directions opposite to each other. Two beam splitters 16 and 17 which reflect the two laser beams 21 and 22 to change their directions by 90 deg. and emit them to the same direction are provided. On the other hand, a beam splitter 18 which changes the direction of one of the laser beams 21 and 22 emitted from the front and rear edges 19 and 20 by 90 deg. to the substrate side as a monitoring laser beam 25 is provided and a photodiode 15 which detects the monitoring laser beam 25 is also provided. With this constitution, a double-beam array semiconductor laser device can be obtained easily and at low cost by employing the LD chip 12 which has one laser beam emitting point on each of its front and rear edges 19 and 20. Moreover, secure APC driving and an optical pickup function can be realized.
公开日期1990-10-12
申请日期1989-03-27
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/69054]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORP
推荐引用方式
GB/T 7714
HASEGAWA KAZUYOSHI. Semiconductor laser device. JP1990253688A. 1990-10-12.

入库方式: OAI收割

来源:西安光学精密机械研究所

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