Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI; ISHII MITSUO |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253687A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which is composed of a less number of components and facilitates reduction of a position adjustment work at a low cost by a method wherein a monitoring photodiode and a signal reproducing photodiode are assembled in a submount with high position accuracy. CONSTITUTION:A signal reproducing photodiode 14 and a monitoring photodiode 4 are formed on the same plane of a submount 16 which is a thermal stress relieving member. An incident light is reflected by a beam splitter 17 provided on the signal reproducing photodiode 14 to the direction opposite to the signal reproducing photodiode 14 and introduced into the monitoring photodiode 4 by a mirror 18 provided on the monitoring photodiode 4. Further, a laser diode chip 1 which emits a laser beam is provided at a required position on a level same as or higher than the plane of the submount 16 on which the signal reproducing photodiode 14 and the monitoring photodiode 4 are formed. With this constitution, the number of components for a pickup device can be reduced, the size can be reduced and the cost can be saved. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/69055]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI,ISHII MITSUO. Semiconductor laser device. JP1990253687A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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