Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991076033A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To simplify the assembly process of a laser diode, to miniaturize the pickup, and also, to reduce the position adjustment of the laser device by using a surface light emission type laser diode, and forming a monitoring photodiode and a signal reproducing photodiode in the same plane of a submount. CONSTITUTION:A monitoring photodiode (PD) 4 and a signal reproducing PD 14 are formed in the same plane of a submount 2, a surface light emission type laser diode (LD) 17 is assembled on the submount 2, a mirror 16 is installed on the monitoring PD 4 and the signal reproducing PD 14, and a beam splitter 10 is installed on the surface light emission type LD 17. That is, the LD 17, the monitoring PD 4 and the signal reproducing PD 14 are placed on the parallel surface. In such a way, die bonding and wire bonding can be simplified, and since the monitoring PD 4 and the signal reproducing PD 14 can be formed in the submount 2 by using a photoplate technique, the device has high positioning accuracy, and an adjustment at the time of assembly of a pickup can be decreased, and also, it can be miniaturized. |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/69066]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1991076033A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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